The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Jan. 10, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuan-Ting Pan, Taipei City, TW;
Kuo-Cheng Chiang, Zhubei City, TW;
Shi-Ning Ju, Hsinchu City, TW;
Jin Cai, Hsinchu City, TW;
Chih-Hao Wang, Baoshan Township, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor structure is provided. The method includes forming a first plurality of strip patterns and a second plurality of strip patterns that extend over an epitaxial stack in a first horizontal direction and are alternately arranged in a second horizontal direction perpendicular to the first horizontal direction. The method further includes patterning the first plurality of strip patterns to form a first plurality of island patterns, and patterning the second plurality of strip patterns to form a second plurality of island patterns. The first plurality of island patterns and the second plurality of island patterns are alternately arranged in the second horizontal direction. The method further includes etching the epitaxial stack using the first plurality of island patterns and second plurality of island patterns, thereby forming a fin structure.