The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Dec. 21, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Shay Reboh, Guilderland, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Kisik Choi, Watervliet, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/23 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 64/254 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 84/85 (2025.01);
Abstract

A semiconductor structure includes a first transistor including a first set of one or more channels, a second transistor vertically stacked over the first transistor, the second transistor including a second set of one or more channels, the second set of channels of the second transistor being horizontally offset from the first set of channels of the first transistor. The semiconductor structure also includes a power plane at a first side of the semiconductor structure, and a contact extending from the first side of the semiconductor structure, through the power plane, to a source/drain region of the second transistor.


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