The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Jul. 03, 2023
Winbond Electronics Corp., Taichung City, TW;
Chi-Ching Liu, Taichung City, TW;
Chia-Ming Liu, Taichung City, TW;
Yao-Ting Tsai, Kaohsiung City, TW;
Chang-Tsung Pai, Kaohsiung City, TW;
WINBOND ELECTRONICS CORP., Taichung City, TW;
Abstract
The method of forming the semiconductor device includes the following steps. An isolation structure is formed between a plurality of active areas. Semiconductor structures are formed over the active areas, and a portion of each semiconductor structure is embedded in the isolation structure. Sacrificial structures are formed on the semiconductor structures. An ion implantation process is performed to form implanted regions between the portions of the semiconductor structures embedded in the isolation structure. The sacrificial structures are removed to form patterned semiconductor structures. A dielectric structure is formed on the patterned semiconductor structure. A control structure is formed on the dielectric structure.