The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Jul. 21, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

John Tolle, Gilbert, AZ (US);

Thomas Kirschenheiter, Tempe, AZ (US);

Joe Margetis, Gilbert, AZ (US);

Patricia M. Liu, Saratoga, CA (US);

Zuoming Zhu, Sunnyvale, CA (US);

Flora Fong-Song Chang, Saratoga, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/815 (2025.01); H01L 21/02 (2006.01); H10D 30/69 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8164 (2025.01); H01L 21/0245 (2013.01); H01L 21/02507 (2013.01); H01L 21/02532 (2013.01); H10D 30/751 (2025.01); H10D 62/8171 (2025.01); H01L 21/02381 (2013.01);
Abstract

A method and apparatus for forming a super-lattice structure on a substrate is described herein. The super-lattice structure includes a plurality of silicon-germanium layers and a plurality of silicon layers disposed in a stacked pattern. The methods described herein produce a super-lattice structure with transition width of less than about 1.4 nm between each of the silicon-germanium layers and an adjacent silicon layer. The methods described herein include flowing one or a combination of a silicon containing gas, a germanium containing gas, and a halogenated species.


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