The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Jan. 10, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Han-Jong Chia, Hsinchu City, TW;
Shih-Peng Tai, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a first substrate, a transistor, an interconnection structure, a first bonding pad, a magnetic tunnel junction (MTJ) structure, a conductive line and a second substrate. The transistor is formed on the first substrate. The interconnection structure is formed on the first substrate and electrically connected to the transistor. The first bonding pad is formed on and electrically connected to the interconnection structure. The MTJ structure is disposed on and electrically connected to the first bonding pad, wherein the MTJ structure comprises a free layer, a tunnel barrier layer, a synthetic antiferromagnet layer sequentially stacked up over the first bonding pad. The conductive line is disposed on the MTJ structure. The second substrate is disposed on the conductive line.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile