The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Feb. 24, 2023
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Sipeng Gu, Clifton Park, NY (US);
Qintao Zhang, Mt Kisco, NY (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02); H10B 12/05 (2023.02); H10D 64/512 (2025.01);
Abstract
Disclosed herein are approaches for forming a dynamic random-access memory device (DRAM). An example DRAM device may include a plurality of pillars extending from a base of a substrate, a gate formed around the plurality of pillars, and a buried bitline formed within the base, wherein an upper surface of the buried bitline is recessed below an upper surface of the base. The DRAM device may further include a bottom source/drain formed beneath the plurality of pillars, and a contact formed in the bottom source/drain, between the plurality of pillars.