The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Mar. 13, 2024
Applicant:

Stmicroelectronics International N.v., Geneva, CH;

Inventors:

Francesco Pulvirenti, Acireale, IT;

Salvatore Giuseppe Privitera, Paterno, IT;

Cesare Bimbi, Paterno, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/16 (2006.01); H03K 17/10 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 17/162 (2013.01); H03K 17/102 (2013.01); H03K 17/6872 (2013.01);
Abstract

A buffer circuit for driving a GaN power switch includes an input node to receive an input signal and an output node to produce a gate signal for the GaN power switch. The buffer includes a push-pull stage that includes a first transistor coupled between a supply voltage node and the output node, a second transistor coupled between the supply voltage node and the output node, a third transistor coupled between the output node and a reference voltage node, and a fourth transistor coupled between the output node and the reference voltage node. The buffer includes a pre-buffer stage configured to receive the input signal and to produce respective driving signals for the first, second, third and fourth transistors to produce the gate signal at the output node in four consecutive phases.


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