The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Dec. 26, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Yu Wang, Wuhan, CN;

Daesik Song, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/30 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G06F 3/06 (2006.01); G11C 7/02 (2006.01); G11C 8/08 (2006.01); G11C 8/14 (2006.01); G11C 11/4074 (2006.01); G11C 11/408 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/0433 (2013.01); G11C 16/30 (2013.01); G06F 3/0658 (2013.01); G11C 7/02 (2013.01); G11C 8/08 (2013.01); G11C 8/14 (2013.01); G11C 11/4074 (2013.01); G11C 11/4085 (2013.01);
Abstract

The present disclosure provides memory devices, operating methods thereof, memory systems, and word line voltage control circuits. A disclosed memory device comprises an array of memory cells, a plurality of word lines coupled with the memory cells, and a peripheral circuit coupled to the memory cells through the word lines. The peripheral circuit is configured to reduce a first voltage on a non-selected word line adjacent to a selected word line to a second voltage, provide a pre-charge voltage to the selected word line, increase the second voltage on the non-selected word line to a third voltage, and float the selected word line.


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