Microelectronic devices and memory devices including vertically spaced transistors and storage devices, and related electronic systems

Abstract

A microelectronic device includes a first die and a second die vertically overlying and attached to the first die. The first die includes an array region and a peripheral region horizontally neighboring the array region. The array region includes memory cells respectively including a first transistor structure, a second transistor structure horizontally neighboring the first transistor structure, and a storage device vertically underlying and coupled to the first transistor structure and the second transistor structure. The peripheral region includes sub word line driver circuitry. The second die includes sense amplifier regions and a CMOS region horizontally neighboring some of the sense amplifier regions. The sense amplifier regions are within a horizontal area of the array region of the first die and include sense amplifier circuitry. Related memory devices and electronic systems are provided.