The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Aug. 15, 2023
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Zhichao Du, Wuhan, CN;
Yu Wang, Wuhan, CN;
Daesik Song, Wuhan, CN;
Xu Hou, Wuhan, CN;
Danyang Li, Wuhan, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/408 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G11C 11/4087 (2013.01); G11C 11/4091 (2013.01);
Abstract
A memory device includes a memory array structure and a peripheral structure. The memory array structure includes at least one memory bank, and each memory bank includes a plurality of memory blocks. The peripheral structure includes a word line driver circuit and a sense amplifier circuit. A first area including the word line driver circuit and the sense amplifier circuit at least partially overlaps a second area including a memory block in a plan view of the memory device.