The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

May. 25, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Shuji Azumo, Yamanashi, JP;

Sena Fujita, Yamanashi, JP;

Tadashi Mitsunari, Yamanashi, JP;

Yumiko Kawano, Yamanashi, JP;

Shinichi Ike, Gyeonggi-do, KR;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/04 (2006.01); C23C 16/458 (2006.01); C23C 16/54 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45527 (2013.01); C23C 16/045 (2013.01); C23C 16/45563 (2013.01); C23C 16/4583 (2013.01); C23C 16/54 (2013.01); C23C 16/56 (2013.01);
Abstract

A film forming method includes: (A) preparing a substrate with a surface having a first region where a first film is exposed, and a second region where a second film formed by a material different from the first film is exposed; (B) forming a stepped portion in the surface such that the first region becomes higher than the second region; (C) supplying a liquid to the surface where the stepped portion is formed; and (D) supplying, to the surface, a processing gas that chemically changes the liquid, and moving the liquid from the second region to the first region by a reaction between the processing gas and the liquid to selectively form a film in the first region with respect to the second region.


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