The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Jun. 14, 2023
United Microelectronics Corp., Hsin-Chu City, TW;
Yu-Chun Chen, Kaohsiung City, TW;
Yu-Ping Wang, Hsinchu City, TW;
I-Ming Tseng, Kaohsiung City, TW;
Yi-An Shih, Changhua County, TW;
Chung-Sung Chiang, Kaohsiung City, TW;
Chiu-Jung Chiu, Tainan City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A semiconductor device includes a bottom wafer, a top wafer bonded to the bottom wafer, a first dielectric layer, a second dielectric layer, a deep via conductor structure, and a connection pad. The top wafer includes a first interconnection structure. The first dielectric layer is disposed on the top wafer. The second dielectric layer is disposed on the first dielectric layer. The deep via conductor structure penetrates through the second dielectric layer and the first dielectric layer and is connected with the first interconnection structure. The connection pad is disposed on the second dielectric layer and the deep via conductor structure. A first portion of the second dielectric layer is sandwiched between the connection pad and the first dielectric layer. A second portion of the second dielectric layer is connected with the first portion, and a thickness of the second portion is less than a thickness of the first portion.