The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Jun. 25, 2021
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Lee J. Brogan, Newberg, OR (US);

Patrick A. Van Cleemput, Duvall, WA (US);

Matthew Martin Huie, Tigard, OR (US);

Kyle Jordan Blakeney, Fremont, CA (US);

Yi Hua Liu, Sherwood, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01); H10W 20/00 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10W 20/033 (2026.01); C23C 16/34 (2013.01); C23C 16/403 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H10W 20/042 (2026.01); H10W 20/056 (2026.01); H10W 20/076 (2026.01); H10W 20/081 (2026.01); H10W 20/096 (2026.01); H10W 20/425 (2026.01); H01J 2237/3321 (2013.01);
Abstract

Various embodiments herein relate to methods, apparatus, and systems for forming an interconnect structure, or a portion thereof, on a substrate. In one example, the method includes receiving the substrate in a processing chamber, the substrate having dielectric material exposed within recessed features formed therein; exposing the substrate to plasma to thereby modify a top surface of the dielectric material; forming a metal oxide barrier layer on the modified top surface of the dielectric material, wherein the metal oxide barrier layer is formed through atomic layer deposition and/or chemical vapor deposition. In certain implementations, one or more additional step may be taken to improve processing results, for example to promote nucleation and/or adhesion of relevant layers.


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