The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Dec. 06, 2021
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Yiwen Fan, Fremont, CA (US);

Wenbing Yang, Campbell, CA (US);

Ran Lin, Fremont, CA (US);

Samantha Siamhwa Tan, Newark, CA (US);

Timothy William Weidman, Sunnyvale, CA (US);

Tamal Mukherjee, Fremont, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/26 (2026.01); C23F 1/00 (2006.01); C23F 1/12 (2006.01); H10B 61/00 (2023.01); H10P 50/24 (2026.01); H10P 50/28 (2026.01);
U.S. Cl.
CPC ...
H10P 50/267 (2026.01); C23F 1/00 (2013.01); C23F 1/12 (2013.01); H10B 61/00 (2023.02); H10P 50/242 (2026.01); H10P 50/266 (2026.01); H10P 50/283 (2026.01);
Abstract

A method for etching a metal containing material is provided. The metal containing material is exposed to a halogen containing fluid or plasma to convert at least some of the metal containing material into a metal halide material. The metal halide material is exposed to a ligand containing fluid or plasma, wherein at least some of the metal halide material is formed into a metal halide ligand complex. At least some of the metal halide ligand complex is vaporized.


Find Patent Forward Citations

Loading…