The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

May. 15, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Kuo-Pin Chang, Zhubei city, TW;

Yu-Wei Ting, Taipei City, TW;

Kuo-Ching Huang, Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 79/00 (2026.01); H10B 53/20 (2023.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10N 79/00 (2023.02); H10B 53/20 (2023.02); H10D 1/68 (2025.01);
Abstract

A device structure includes a parallel connection of capacitor-switch assemblies located over a substrate. The capacitor-switch assemblies include a first capacitor-switch assembly that includes a first series connection of a first capacitor and a first non-Ohmic switching device, which has a first threshold voltage and includes a first primary switch electrode, a first secondary switch electrode, and a first non-Ohmic switching material portion. The capacitor switch assemblies further include a second capacitor-switch assembly that includes a second series connection of a second capacitor and a second non-Ohmic switching device, which has a second threshold voltage and includes a second primary switch electrode, a second secondary switch electrode, and a second non-Ohmic switching material portion. The second threshold voltage is different from the first threshold voltage. The non-Ohmic switching devices may be conditionally turned on depending on a magnitude of applied voltage spikes.


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