The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Jul. 29, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Wei Lee, Hsinchu City, TW;

Chung-Liang Cheng, Changhua County, TW;

Pei-Wen Liu, Hsinchu City, TW;

Ke-Wei Su, Hsinchu County, TW;

Kuan-Lun Cheng, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); G01N 33/543 (2006.01); H10D 87/00 (2026.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6728 (2025.01); G01N 33/5438 (2013.01); H10D 30/6755 (2025.01); H10D 87/00 (2025.01); H10D 99/00 (2025.01);
Abstract

An interconnect structure is disposed over a semiconductor substrate. The interconnect structure includes a plurality of interconnect layers. A first thin-film transistor (TFT) and a second TFT are disposed over the semiconductor substrate. The first TFT and the second TFT each vertically extend through at least a subset of the interconnect layers. An opening is formed in the interconnect structure. The opening is disposed between the first TFT and the second TFT. A sensing film is disposed over a bottom surface and side surfaces of the opening.


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