The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Nov. 17, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wei-Chung Chen, Hsinchu City, TW;

Jun-Yi Wu, Miaoli County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/20 (2025.01);
U.S. Cl.
CPC ...
H10D 1/20 (2025.01);
Abstract

A method for forming a semiconductor device structure is provided. The method includes providing a substrate. The method includes performing a first degas process on the substrate. The method includes forming a first magnetic layer over the substrate. The method includes forming a second magnetic layer on the first magnetic layer. The method includes performing a second degas process on the substrate, the first magnetic layer, and the second magnetic layer. The method includes forming a third magnetic layer on the second magnetic layer after the second degas process is performed. The method includes partially removing the first magnetic layer, the second magnetic layer, and the third magnetic layer.


Find Patent Forward Citations

Chen, Wei-Chung. (2026). Semiconductor device structure with magnetic structure and method for forming the same (U.S. Patent No. 12648160). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12648160

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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