The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Apr. 28, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/065 (2023.01); H10B 80/00 (2026.01);
U.S. Cl.
CPC ...
H01L 24/06 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H10B 80/00 (2023.02); H01L 2224/03616 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05687 (2013.01); H01L 2224/06505 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06565 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01);
Abstract
At least one aspect of the present disclosure is directed to a semiconductor device. The semiconductor device includes a first substrate including a first area and a second area; a second substrate including a third area and a fourth area; a first bonding layer comprising a first dielectric material that bonds the first area to the third area; and a second bonding layer comprising a second dielectric material that bonds the second area to the fourth area. The first dielectric material is different from the second dielectric material.