The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Sep. 23, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei City, CN;

Inventors:

Kanyu Cao, Hefei, CN;

Tzung-Han Lee, Hefei, CN;

Chih-Cheng Liu, Hefei, CN;

Huaiwei Yang, Hefei, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
H10B 12/33 (2023.02); G11C 5/063 (2013.01); H10B 12/036 (2023.02); H10B 12/05 (2023.02); H10B 12/09 (2023.02); H10B 12/482 (2023.02); H10B 12/485 (2023.02); H10B 12/488 (2023.02); H10B 12/50 (2023.02);
Abstract

A semiconductor structure is provided. The semiconductor structure includes: a substrate; a plurality of capacitors arranged in the substrate; and a plurality of active pillars arranged above the substrate. Each of the plurality of active pillars is arranged above a respective one of the plurality of capacitors, and a bottom portion of each of the plurality of active pillars is electrically connected to a top portion of the respective one of the plurality of capacitors therebelow.


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