The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

May. 14, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ashwin Sanjay Lele, Hsinchu, TW;

Win-San Khwa, Hsinchu, TW;

Meng-Fan Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/037 (2006.01); H03K 17/687 (2006.01); H03K 19/20 (2006.01);
U.S. Cl.
CPC ...
H03K 3/037 (2013.01); H03K 17/6872 (2013.01); H03K 19/20 (2013.01);
Abstract

A storage device includes an array of latching units and a plurality of inter-unit transmission switches. Each pair of two adjacent latching units is coupled together through an inter-unit transmission switch. Each latching unit includes a first inverter and a first transmission switch serially connected between a first bit node and a second bit node, and a second inverter and a second transmission switch serially connected between the second bit node and the first bit node. The first inverter has an input configured to receive a voltage from the first bit node either directly or through the first transmission switch. The second inverter has an input configured to receive a voltage from the second bit node either directly or through the second transmission switch.


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