The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Sep. 16, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chi-Hsien Lin, Hsinchu, TW;

Ho-Hsiang Chen, Hsinchu, TW;

Hsien-Yuan Liao, Hsinchu, TW;

Tzu-Jin Yeh, Hsinchu, TW;

Ying-Ta Lu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03B 5/12 (2006.01); H03B 1/04 (2006.01); H03H 7/01 (2006.01);
U.S. Cl.
CPC ...
H03B 5/1228 (2013.01); H03B 1/04 (2013.01); H03B 5/1203 (2013.01); H03B 5/1206 (2013.01); H03B 5/1212 (2013.01); H03B 5/1243 (2013.01); H03B 5/1296 (2013.01); H03H 7/0161 (2013.01); H03B 2200/009 (2013.01);
Abstract

A voltage-controlled oscillator (VCO) includes a power supply source, a voltage source, a reference voltage node, first and second transistors, each including a source terminal coupled to the reference voltage node, and first through fourth conductive structures. The first conductive structure includes a first terminal coupled to the power supply source, a first extending portion coupled between the first terminal and a drain terminal of the first transistor, and a second extending portion coupled between the first terminal and a drain terminal of the second transistor, and the second conductive structure includes a second terminal coupled to the voltage source, a third extending portion coupled in series with the third conductive structure between the second terminal and a gate of the first transistor, and a fourth extending portion coupled in series with the fourth conductive structure between the second terminal and a gate of the second transistor.


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