The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Aug. 27, 2021
Tokyo Electron Limited, Tokyo, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
An etching method includes: steps a), b), c), and d). Step a) provides a substrate having an underlying layer and an etching target film formed on the underlying layer, on a stage. Step b) generates plasma from a processing gas. Step c) supplies a bias power having a first frequency to the stage to etch the etching target film, thereby forming a recess. Step d) changes a frequency of the bias power to a second frequency different from the first frequency according to an aspect ratio of the recess after step c), to further etch the etching target film. After a generation of the plasma, the etching target film is continuously etched during a time period until the underlying layer is exposed.