Memory and operating method thereof, memory system and electronic device

Abstract

Implementations of the present disclosure disclose a memory and an operating method thereof, a memory system, and an electronic device. The memory includes a memory cell array and a peripheral circuit coupled with the memory cell array. The peripheral circuit includes: a temperature sensing circuit configured to sense a temperature of the memory and generate a temperature signal based on the sensed temperature; a control logic circuit configured to determine a target refresh period based on the temperature signal and a mapping table, wherein the mapping table includes a plurality of preset temperature signals and a plurality of preset refresh periods in a one-to-one correspondence; and a refresh control circuit configured to adjust a refresh period of a refresh signal to the target refresh period, wherein the refresh signal is configured to indicate performing a refresh operation on the memory cell array.