The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Dec. 05, 2022
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

François Rummens, Grenoble, FR;

Thomas Mesquida, Grenoble, FR;

Laurent Grenouillet, Grenoble, FR;

Alexandre Valentian, Grenoble, FR;

Elisa Vianello, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G06N 3/063 (2023.01); G06N 3/08 (2023.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
G06N 3/063 (2013.01); G06N 3/08 (2013.01); G11C 11/005 (2013.01);
Abstract

A data storage circuit includes a matrix array of memory cells. The memory cells are configurable and non-volatile. Each one is intended to operate in either one of two operating configurations; the first operating configuration corresponding to a ferroelectric random-access memory; and the second operating configuration corresponding to a metal-oxide resistive random-access memory. Each memory cell comprises: a stack of thin layers in the following order: a first layer made of an electrically conductive material forming a lower electrode, a second layer made of a dielectric and ferroelectric material and a third layer made of electrically conductive material forming an upper electrode.


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