The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Jun. 10, 2024
Stmicroelectronics International N.v., Geneva, CH;
Universita' Di Catania, Catania, IT;
Carmelo Pino, Catania, IT;
Francesco Rundo, Gravina di Catania, IT;
Salvatore Coffa, Milan, IT;
Concetto Spampinato, Catania, IT;
Abstract
According to an embodiment, a system is proposed for predicting future drain-to-source resistance values of a power metal-oxide-semiconductor field-effect transistor (MOSFET). The system includes a current sensing circuit configured to extract a drain current of the power MOSFET during a transient or switching phase of the power MOSFET; a conditioning circuit configured to extract a drain-to-source voltage of the power MOSFET during the transient or switching phase of the power MOSFET; and a machine learning model configured to receive the drain current and the drain-to-source voltage of the power MOSFET as inputs, and determine future drain-to-source resistance values of the power MOSFET using the machine learning model based on the extracted drain current and the drain-to-source voltage of the power MOSFET, wherein a fault condition of the power MOSFET is signaled in response to the predicted future drain-to-source resistance values exceeding a threshold.