The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Dec. 26, 2023
Globalwafers Co., Ltd., Hsinchu, TW;
Carlo Zavattari, Varallo Pombia, IT;
Michael Raffeiner, Parcines, IT;
Paolo Delpero, Merano, IT;
Peter Albrecht, O'Fallon, MO (US);
Fabrizio Bonda, Vercelli, IT;
Massimo Gariddi, Oleggio, IT;
Patrizio Pregnolato, Novara, IT;
Pietro Valcozzena, Agordo, IT;
Maria Porrini, Novara, IT;
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
Methods for producing an off-orientation single crystal silicon wafer are disclosed. After a single crystal silicon ingot is grown, the single crystal silicon ingot is ground to increase an off-orientation of the single crystal silicon ingot. A wafer is sliced from ground single crystal silicon ingot. The wafer has an off-orientation greater than the ground single crystal silicon ingot.