The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Mar. 14, 2023
Applicant:
Lintec Corporation, Tokyo, JP;
Inventors:
Nana Shindo, Saitama, JP;
Satoshi Naganawa, Tokyo, JP;
Assignee:
LINTEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 7/00 (2019.01); B32B 9/00 (2006.01); C08J 3/28 (2006.01); C08J 7/04 (2020.01); C08J 7/048 (2020.01);
U.S. Cl.
CPC ...
C08J 7/0427 (2020.01); C08J 3/28 (2013.01); C08J 2367/03 (2013.01); C08J 2483/16 (2013.01);
Abstract
Provided are a gas barrier film and manufacturing methods for making the gas barrier film. The gas barrier film includes a gas barrier layer containing silicon and oxygen as main components. The gas barrier layer has a region in the thickness direction containing silicon, oxygen, and nitrogen. The region has an element ratio of nitrogen of 5 at % or greater and a thickness of 30 nm or greater.
Shindo, Nana. (2026). Gas barrier film and method for manufacturing gas barrier film (U.S. Patent No. 12643985). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12643985
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile