The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Sep. 20, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Adam Gildea, Albany, NY (US);
Satohiko Hoshino, Kumamoto, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 99/00 (2026.01); H10W 72/00 (2026.01); H10W 80/00 (2026.01);
U.S. Cl.
CPC ...
H10W 99/00 (2026.01); H10W 72/019 (2026.01); H10W 72/01961 (2026.01); H10W 80/312 (2026.01); H10W 80/327 (2026.01);
Abstract
Semiconductor devices and corresponding methods of manufacture are disclosed. The methods include forming a first layer on a first substrate, treating the first layer with a nitrogen-based plasma to form a first type of dangling bonds, treating the first layer with an oxygen-based plasma to transform the first type of dangling bonds into a second type of dangling bonds, and treating the first layer with water to transform the second type of dangling bonds into a third type of dangling bonds.