Method of forming a semiconductor structure including bonding a plurality of first semiconductor dies to a plurality of second semiconductor dies

Abstract

A semiconductor structure and a method of manufacturing a semiconductor structure are provided. First semiconductor dies are formed from a first substrate, each of the first semiconductor die including an interconnect structure having a first dielectric material. A first thinning operation is performed on each of the first semiconductor dies. Second semiconductor dies are formed from a second substrate. The first semiconductor dies are bonded to a third substrate. A first gap between the first semiconductor dies is filled with a second dielectric material. The second semiconductor dies are bonded to the first semiconductor dies through a second bonding film, each of the first semiconductor dies electrically connected to each of the corresponding second semiconductor dies. A second gap between the second semiconductor dies is filled with a third dielectric material, at least one of the second and third dielectric materials different from the first dielectric material.