The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Jun. 17, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Wei-An Lai, Taichung City, TW;

Wei-Cheng Lin, Taichung City, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 23/535 (2006.01); H10D 84/90 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 23/5286 (2013.01); H01L 23/535 (2013.01); H10D 84/988 (2025.01);
Abstract

A semiconductor device includes a base, source, drain and gate electrodes, signal tracks and a power mesh. The source, drain and gate electrodes are arranged on a surface of the base, wherein the gate electrodes are extended along a first direction. The signal tracks arranged above the first surface of the base and above the source and drain electrodes and the gate electrodes, wherein the signal tracks are extended along the first directions. A power mesh is arranged below the first surface of the base, the power mesh comprising first power rails extended in the second direction and second power rails extended in a first direction, wherein the second direction is substantially perpendicular to the first direction.


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