The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
May. 07, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chia-Chung Chen, Keelung, TW;
Chi-Feng Huang, Hsinchu County, TW;
Victor Chiang Liang, Hsinchu City, TW;
Chung-Hao Chu, Hsinchu, TW;
Ching-Yu Yang, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a first gate stack structure over a substrate, a source/drain epitaxial layer, a lightly doped region, and a silicide region. The source/drain epitaxial layer is disposed in the substrate and adjacent to the first gate stack structure. The lightly doped region is located in the substrate to be electrically connected to the source/drain epitaxial layer. The lightly doped region includes a first portion protrudes from a sidewall of the source/drain epitaxial layer. The silicide region is in contact with a top surface and sidewalls of a top portion of the source/drain epitaxial layer and a top surface of the first portion of the lightly doped region. The top portion of the source/drain epitaxial layer is higher than the top surface of the first portion of the lightly doped region.