The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Aug. 31, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Ming-Ying Pei, Hsinchu City, TW;
Yan-Hong Liu, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10P 72/00 (2026.01); H01J 37/32 (2006.01); H10P 14/60 (2026.01);
U.S. Cl.
CPC ...
H10P 72/0421 (2026.01); H01J 37/32449 (2013.01); H10P 14/6336 (2026.01); H10P 14/6532 (2026.01); H10P 72/0604 (2026.01);
Abstract
The present disclosure provides a method of determining a leakage of a semiconductor manufacturing tool. The method includes: placing a substrate including a material layer on the substrate into a chamber of the semiconductor manufacturing tool; delivering a gas into the chamber to react with the material layer; obtaining a gas composition inside the chamber; and comparing the gas composition to a referential gas composition. The leakage is determined to exist if the gas composition is substantially different from the referential gas composition.