The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Apr. 18, 2022
Hitachi High-tech Corporation, Tokyo, JP;
Jiahui Liu, Tokyo, JP;
Hayato Watanabe, Tokyo, JP;
Satoshi Une, Tokyo, JP;
Mafumi Sato, Tokyo, JP;
Yuya Yamamoto, Tokyo, JP;
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Abstract
A plasma processing method for preventing a protective film from being deposited in a direction parallel to a substrate surface to block an opening of a mask pattern and improving pattern processing even in a narrow space, by plasma-etching an etching target film using a protective film formed on a mask, and forming the protective film on the mask using plasma generated by a mixed gas of a silicon element-containing gas, an oxygen element-containing gas, a nitrogen element-containing gas, and a hydrogen element-containing gas, in which the hydrogen element-containing gas is Hgas, HBr gas, or CHgas. The oxygen element-containing gas is Ogas, CO gas, COgas, COS gas, or SOgas.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile