The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Jan. 30, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shu-Ling Liao, Taichung City, TW;
Te-En Cheng, Taoyuan City, TW;
Nai-Yu Yeh, Changhua City, TW;
Ming-Han Chung, Hsinchu City, TW;
Chunyao Wang, Zhubei City, TW;
Yung-Cheng Lu, Hsinchu City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Fabrication of semiconductor devices is provided. A chamber is evacuated to a pressure of less than about 1 Torr. The chamber is heated to a temperature in excess of about 400° C. A precursor is introduced into the chamber. The precursor is decomposed with a first plasma. A first layer is deposited on a surface of the semiconductor device based on the decomposed precursor. The precursor is densified to form a first gate spacer. The precursor is introduced into the chamber subsequent to forming the first layer. The precursor is decomposed with a second plasma. A second layer is deposited on the surface of the semiconductor device based on the decomposed precursor. The deposited precursor is densified to form a second gate spacer.