The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Apr. 29, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 52/80 (2023.01); H10B 61/00 (2023.01); H10N 52/00 (2023.01);
U.S. Cl.
CPC ...
H10N 52/80 (2023.02); H10B 61/00 (2023.02); H10N 52/00 (2023.02);
Abstract
A memory device including a pair of magnetic conductive posts, a Spin-Hall-Effect-assisted (SHE-assisted) layer, and a magnetic tunneling junction (MTJ) structure. The Spin-Hall-Effect-assisted (SHE-assisted) layer is disposed over and electrically connected to the pair of magnetic conductive posts. The magnetic tunneling junction (MTJ) structure has in-plane magnetic anisotropy, wherein the MTJ structure is disposed on the SHE-assisted layer, and the pair of magnetic conductive posts provide an in-plane magnetic field during a write operation of the MTJ structure.