The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Sep. 18, 2023
Applicants:

Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, TW;

Tsmc Nanjing Company, Limited, Nanjing, CN;

Inventors:

Xin Jian Cui, Hsinchu, TW;

Liu Han, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 89/10 (2025.01); G06F 30/392 (2020.01); G06F 30/3953 (2020.01);
U.S. Cl.
CPC ...
H10D 89/10 (2025.01); G06F 30/392 (2020.01); G06F 30/3953 (2020.01);
Abstract

An IC structure includes first through third n-wells aligned along a first direction in a semiconductor substrate, wherein the first n-well is separated from each of the second and third n-wells by corresponding spaces, a first plurality of active areas, gate structures, and metal-like defined (MD) segments overlying and electrically connected to the active areas positioned in the first n-well, a first tap structure overlying and electrically connected to the second n-well, a second tap structure overlying and electrically connected to the third n-well, and a first metal segment extending in the first direction, overlying the first plurality of transistors, and electrically connected to each of the first and second tap structures.


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