The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Dec. 06, 2023
International Business Machines Corporation, Armonk, NY (US);
Chen Zhang, Santa Clara, CA (US);
Ruilong Xie, Niskayuna, NY (US);
Min Gyu Sung, Latham, NY (US);
Shay Reboh, Guilderland, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure includes a transistor device having a first nanosheet device disposed on a second nanosheet device in a stacked configuration. The first nanosheet device includes a plurality of first nanosheet channel layers, wherein each of the plurality of first nanosheet channel layers have a nanosheet channel portion on one end and a dielectric material portion on another end. The second nanosheet device includes a plurality of second nanosheet channel layers. The dielectric material portion of the plurality of first nanosheet channel layers is part of a non-active region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile