The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Jan. 09, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jaehong Lee, Latham, NY (US);
Seungchan Yun, Waterford, NY (US);
Sooyoung Park, Clifton Park, NY (US);
Kang-Ill Seo, Springfield, VA (US);
Abstract
Provided is field-effect transistor structure including: a substrate including therein at least one 1doped region, a 2doped region on one side of the 1doped region, and a 3doped region on another side of the 1doped region; a 1channel structure including therein a 4doped region on the 2doped region in the substrate; and a 2channel structure, at a side of the 1channel structure, including therein a 5doped region on the 3doped region in the substrate, wherein the 4, 2, 1, 3and 5doped regions form a sequentially connected passive device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile