Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

Abstract

A silicon carbide semiconductor device includes a starting substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, a first semiconductor region of the first conductivity type, a gate insulating film, a gate electrode, an interlayer insulating film, an ohmic electrode, a barrier metal provided at the surface of the ohmic electrode and the surface of the interlayer insulating film, a surface electrode provided at the surface of the barrier metal, and a back electrode. The barrier metal has a three-layered structure including a first TiN film, a Ti film, and a second TiN film; the first TiN film contains TiN having a crystal grain size that is larger than a crystal grain size of TiN of the second TiN film.