The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Aug. 21, 2023
Renesas Electronics Corporation, Tokyo, JP;
Yuji Enari, Tokyo, JP;
Takashi Tonegawa, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
An interlayer insulating film is formed on an upper surface of a semiconductor substrate. A source pad and a kelvin pad, a gate pad, and a drain pad each having a smaller plane area than a plane area of the source pad are formed on the interlayer insulating film. A first plating layer is formed on the source pad. A second plating layer is formed on each of the kelvin pad, the gate pad, and the drain pad. A material of an uppermost surface of the first plating layer is a metal other than a noble metal, and a material of an uppermost surface of the second plating layer is a noble metal.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile