Semiconductor device and manufacturing method thereof

Abstract

A method of forming a semiconductor device includes forming first and second fin structures on a substrate, forming first and second gate stacks crossing the first and second fin structures, respectively, wherein the first fin structure has a first channel region under the first gate stack and a first source/drain region adjacent to the first channel region, and the second fin structure has a second channel region under the second gate stack and a second source/drain region adjacent to the second channel region, performing an ion implantation process to introduce impurities into the second source/drain region to form an implanted region in the second source/drain region, performing an etching process to form first and second recesses in the first and second source/drain regions, respectively, wherein the second recess penetrates through the implanted region, and forming epitaxy structures in the first and second recesses, respectively.