The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Oct. 31, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yen Lin Chung Chung, Hsinchu, TW;
Kao-Cheng Lin, Hsinchu, TW;
Wei Min Chan, Hsinchu, TW;
Yen-Huei Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A dual-port memory cell includes a first, second, third, and fourth pass-gate transistor, and a first and a second word line. The first pass-gate transistor includes a first gate on a first level. The second pass-gate transistor includes a second gate on a second level below the first level. The third pass-gate transistor includes a third gate on the first level. The fourth pass-gate transistor includes a fourth gate on the second level. The first word line is on a first metal layer above a front-side of a substrate, and is coupled to the first and third pass-gate transistors that correspond to a first port of the dual-port memory cell. The second word line is on a second metal layer below a back-side of the substrate, and is coupled to the second and fourth pass-gate transistors that correspond to a second port of the dual-port memory cell.