The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Jul. 12, 2024
Micron Technology, Inc., Boise, ID (US);
Yu-Chung Lien, San Jose, CA (US);
John Paul Aglubat, Meridian, ID (US);
Zhenming Zhou, San Jose, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Access line voltage ramp rate adjustment is described herein. An apparatus may include a memory device including a plurality of groups of memory cells and a processing device coupled to the memory device which may receive a program command to be executed on one of the plurality of groups of memory cells and determine if a program verify (PVFY) loop associated with the program command is below a threshold for a subblock of the memory device that includes the one of the plurality of groups. Responsive to a determination that the PVFY loop is not below the threshold, the program command can be executed. Responsive to a determination that the PVFY loop is below the threshold, an unselected access line voltage ramp rate for the subblock can be adjusted to a slower rate, and the program command can be executed using the adjusted unselected access line voltage ramp rate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile