The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Jul. 12, 2024
Micron Technology, Inc., Boise, ID (US);
Deping He, Boise, ID (US);
Chun Sum Yeung, San Jose, CA (US);
Micron Technology, Inc., Bosie, ID (US);
Abstract
Methods, systems, and devices for read disturb detection in a memory system are described. A memory system may perform a read operation on a set of memory cells using a read voltage that is between a first target threshold voltage for the set of memory cells and a second target threshold voltage for the set of memory cells. The memory system may determine, based on a quantity of memory cells with a threshold voltage greater than the read voltage being greater than a threshold quantity, a bit error rate for the set of memory cells. And the memory system may determine whether to perform a refresh operation on the set of memory cells based on the bit error rate for the set of memory cells.