The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Apr. 15, 2024
Applicant:

Stmicroelectronics International N.v., Geneva, CH;

Inventor:

Pascal Fornara, Pourrieres, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/22 (2006.01); G11C 16/30 (2006.01); H10B 41/30 (2023.01); H10D 30/01 (2025.01); H10D 30/68 (2025.01);
U.S. Cl.
CPC ...
G11C 16/22 (2013.01); G11C 16/30 (2013.01); H10B 41/30 (2023.02); H10D 30/0411 (2025.01); H10D 30/689 (2025.01);
Abstract

An integrated circuit includes a memory-cell configured to store a piece of data. The memory cell includes a state transistor having a floating gate configured to store a charge representative of the piece of data and a control gate. A capacitive structure includes a first electrically-conductive body coupled to the floating gate, a second electrically-conductive body and a dielectric body between the first and second electrically-conductive bodies. A generation circuit is configured to detect an invasive or non-invasive attack and generate in response thereto a voltage applied to the second electrically-conductive body to generate a leakage current between the first and second electrically-conductive bodies through the dielectric body. The leakage current is applied to the floating gate in order to modify the charge at the floating gate and corrupt the stored piece of data.


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