The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Nov. 12, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yee Yang Tay, Singapore, SG;

Pey Chyi Tang, Singapore, SG;

Jiejuan Liu, Singapore, SG;

Yuan Jun Teng, Singapore, SG;

Hwei Ean Lim, Singapore, SG;

Assignee:

MICRON TECHNOLOGY, INC., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 12/02 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G06F 12/0246 (2013.01); G11C 16/10 (2013.01); G11C 16/0483 (2013.01);
Abstract

Methods, systems, and apparatuses include sampling a memory subportion of a portion of memory, where the memory subportion includes multiple wordlines. A sampled voltage value for the memory subportion is determined based on the sampling. A maximum start voltage delta is received for the memory subportion, where the maximum start voltage delta is an estimated difference between the sampled voltage value and a lowest voltage value for the memory subportion. A start voltage to apply during programming of the memory subportion is determined using the sampled voltage value and the maximum start voltage delta.


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