The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Nov. 30, 2023
Taiwan Semiconductor Manufacturing Company, Ltd, Hsinchu, TW;
Tsmc Nanjing Company, Limited, Nanjing, CN;
Jun-Cheng Liu, Hsinchu, TW;
Zhi-Min Zhu, Hisnchu, TW;
Chien-Yu Huang, Hsinchu, TW;
Cheng Hung Lee, Hsinchu, TW;
Hung-Jen Liao, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
TSMC NANJING COMPANY, LIMITED, Nanjing, CN;
Abstract
A memory device includes a memory cell in a first power domain of a first power supply voltage, a bit line coupled to the memory cell, and a write assist circuit. The write assist circuit includes an input, an output electrically couplable to the bit line in a write operation of the memory cell, an input circuit electrically coupled to the input, and an output circuit electrically coupled between the input circuit and the output. The input circuit is in a second power domain of a second power supply voltage different from the first power supply voltage, and the output circuit is in the first power domain.