The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Apr. 19, 2022
Applicant:
Silicon Storage Technology, Inc., San Jose, CA (US);
Inventor:
Hieu Van Tran, San Jose, CA (US);
Assignee:
Silicon Storage Technology, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06N 3/063 (2023.01); G06N 3/065 (2023.01); G06N 3/0442 (2023.01); G06N 3/0464 (2023.01); G06N 3/048 (2023.01); G06N 3/09 (2023.01); G11C 11/54 (2006.01); G11C 16/04 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G06N 3/063 (2013.01); G06N 3/065 (2023.01); G06N 3/0442 (2023.01); G06N 3/0464 (2023.01); G06N 3/048 (2023.01); G06N 3/09 (2023.01); G11C 11/54 (2013.01); G11C 16/0425 (2013.01); G11C 29/028 (2013.01);
Abstract
Numerous examples are disclosed for performing calibration of various electrical parameters in a deep learning artificial neural network. In one example, a method comprises adjusting a bias voltage applied to one or more non-volatile memory cells in an artificial neural network, performing a performance target check on the one or more non-volatile memory cells in the artificial neural network, and repeating the adjusting and performing until the performance target check indicates an electrical parameter is within a predetermined range.