The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Oct. 20, 2023
Applicant:

United States of America As Represented BY the Administrator of Nasa, Washington, DC (US);

Inventors:

Ari D. Brown, Ellicott City, MD (US);

Vilem Mikula, Lanham, MD (US);

Johannes Staguhn, Baltimore, MD (US);

Archana Devasia, Greenbelt, MD (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10W 70/67 (2026.01); H10W 72/00 (2026.01); H10W 72/20 (2026.01);
U.S. Cl.
CPC ...
H10W 70/688 (2026.01); H10W 72/012 (2026.01); H10W 72/01204 (2026.01); H10W 72/01238 (2026.01); H10W 72/252 (2026.01);
Abstract

A method is provided for fabricating indium bumps on a non-planar surface defined on a substrate having a base layer and a second layer disposed on a portion of the base layer. Photoresist material is layered on the surface of the substrate but is not in contact with edges of the second layer and regions of the base layer adjacent to the edges of the second layer. Portions of the photoresist material are removed to uncover corresponding portions of the base layer. A shadow mask is positioned on the photoresist material that is on the second layer such that the shadow mask extends over the regions of the base layer adjacent to the edges of the second layer. Indium is deposited on the corresponding portions of the base layer that are uncovered. The shadow mask and the photoresist material are then removed.


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