The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Jul. 08, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Woo Seong Jang, Suwon-si, KR;

Won Ji Park, Suwon-si, KR;

Jeong Hoon Ahn, Seongnam-si, KR;

Jae Hee Oh, Seongnam-si, KR;

Ji Hyung Kim, Seoul, KR;

Shaofeng Ding, Suwon-si, KR;

Seok Jun Hong, Suwon-si, KR;

Je Gwan Hwang, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/538 (2006.01); H01L 23/64 (2006.01); H01L 25/065 (2023.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 23/642 (2013.01); H01L 25/0655 (2013.01); H10D 1/042 (2025.01); H10D 1/716 (2025.01); H01L 23/49816 (2013.01); H01L 24/16 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16238 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1432 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/37001 (2013.01);
Abstract

An interposer structure includes an interposer substrate, an interlayer insulating layer on an upper surface of the interposer substrate, a capacitor structure inside the interlayer insulating layer, a first via which penetrates the interlayer insulating layer in a vertical direction, the first via being connected to the capacitor structure, an insulating layer on the interlayer insulating layer, a second via which penetrates the insulating layer in the vertical direction, the second via being connected to the first via, and a through via which completely penetrates each of the interposer substrate, the interlayer insulating layer, and the insulating layer in the vertical direction, an upper surface of the through via being coplanar with an upper surface of the second via.


Find Patent Forward Citations

Jang, Woo. (2026). Interposer structure and semiconductor package including the same (U.S. Patent No. 12635539). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12635539

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…